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#499375
Mon 22 Apr 2019 09:56:AM
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Joined: Feb 2001
Posts: 381,903
Launch Director
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OP
Launch Director
Joined: Feb 2001
Posts: 381,903 |
Abstract: One time programmable (OTP) antifuse base memory is demonstrated based on a bulk junctionless gate-all-around (GAA) nanowire transistor technology. The presented memory consists of a single transistor (1T) footprint without any process modification. The source/drain (S/D) and gate respectively become bit line and word line where the antifuse is formed by oxide breakdown across the gate and the channel. The channel is connected directly to the bit line due to junctionless S/D and inherently is... Source: One Time Programmable Antifuse Memory Based on Bulk Junctionless Transistor
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